Featuring ON Semiconductor’s interline transfer CCD pixel design with a newly-developed electron multiplication output structure, the new KAE-02150 image sensor enables low-light video capture at 30 fps from sunlight to starlight for industrial applications. The 2/3” 2.1 MPixel CCD sensor features a 5.5 µm x 5.5 µm pixel size and a flexible readout architecture that enables use of 1, 2, or 4 outputs. In addition, the KAE-02150 sensor deploys an innovative output circuit design that enables high-dynamic range imaging by allowing either conventional CCD (low-gain) or EMCCD (high-gain) outputs to be utilized on a pixel-by-pixel basis within the same image. The KAE-02150 global shutter sensor is suitable for use in such applications as surveillance, defense/military, scientific and medical imaging, and intelligent transportation systems.
To Learn More:
Contact: ON Semiconductor
Headquarters: Phoenix, AZ, USA
Product: KAE-02150 CCD sensor
Key Features: 2/3" 2.1 MPixel CCD, 5.5 µm x 5.5 µm pixel size, 30 fps frame rate, CCD or EMCCD output on pixel-by-pixel basis.
What ON Semiconductor says:
View more information on the KAE-02150 image sensor.
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