OSI Optoelectronics showing new annular quadrant silicon photodiodes at SPIE Photonics West 2019
Jan. 2, 2019
OSI Optoelectronics will be showing its new Annular Quadrant Silicon Photodiodes, used for backscatter reflectivity measurements, at SPIE Photonics West 2019. The devices operate between 350 nm and 1100 nm with a typical peak wavelength of 980 nm. With responsivity at 790 nm, the typical A/W is 0.52.
OSI Optoelectronics will be showing its new Annular Quadrant Silicon Photodiodes, used for backscatter reflectivity measurements, at SPIE Photonics West 2019. The devices operate between 350 nm and 1100 nm with a typical peak wavelength of 980 nm. With responsivity at 790 nm, the typical A/W is 0.52.
The silicon quadrant detector, an annular package design, includes a 200 µm laser-cut hole on the chip and the header, enabling fiber coupling from the back of the detector. TO-5 and TO-8 packages are available. The active area on each element is 1.6 mm2 and 19.6 mm2 respectively, and the element gap between the segments is ~0.10 mm. The backscatter detector operates between -20° and +60° C, with storage temperatures ranging from -20° to +80° C.
OSI Optoelectronics will be showing the new photodiodes in BiOS booth 8346 and Photonics West 2019 booth 4883.
To Learn More:
Contact: OSI Optoelectronics Headquarters: Hawthorne, CA, USA Product: Annular quadrant silicon photodiodes Key Features: Operate between 350 nm and 1100 nm, peak wavelength of 980 nm.
