e2v unveils new generation of high-sensitivity imaging sensors
MAY 30, 2007--e2v technologies has announced a new generation of high-sensitivity imaging sensors leveraging circuit-layer-transfer technology from Tracit Technologies.
MAY 30, 2007--e2v technologies, a developer and manufacturer of high-technology electronic components and subsystems, has announced a new generation of high-sensitivity imaging sensors leveraging circuit-layer-transfer technology from Tracit Technologies, a new division of the Soitec Group (Euronext, Paris). Combining e2v's expertise with Tracit's circuit-layer-transfer technology delivers back-illumination capability to medium-volume markets for the first time.
This technology produces a dramatic improvement in sensor sensitivity when compared to a standard front-illuminated sensor. This makes the new e2v sensor an ideal solution for a broad range of applications, especially in medium-volume, professional imaging sensor markets. It also complements e2v's existing back-illumination capability for low-volume markets such as aerospace and life sciences.
Tracit Technologies specializes in thin-film-layer transfer technologies that leverage direct wafer bonding and thinning processes. This technology allows transfer of fully processed layers as well as partially processed layers, onto various supports to achieve new structures. A recent strategic acquisition of the Soitec Group, its intellectual property is complementary to Soitec's Smart Cut technology.
"e2v's sensor breakthrough is the combined result of our optimized manufacturing processes and Tracit Technologies' expertise," said Jean-Philippe Lamarcq, Imaging Business Unit general manager at e2v, Grenoble. "We are proud to be first in the medium-volume professional image sensor market to offer this innovative solution and see great potential, particularly in small-pixel CMOS sensors," he added.
Further information on e2v technologies is available at www.e2v.com.